SURFACE SITE DEPENDENCE TO NEGATIVE-ION FORMATION

SURFACE SCIENCE

卷:330

Article

MORRIS, JR ; MARTIN, JS ; GREELEY, JN ; JACOBS, DC

关键词: GALLIUM ARSENIDE;    ION SOLID INTERACTIONS;    MOLECULAR DYNAMICS;    MOLECULE SOLID SCATTERING AND DIFFRACTION, INELASTIC;    NITROGEN OXIDES;    RESONANCE ENHANCED MULTIPHOTON IONIZATION MASS SPECTROSCOPY (REMPI/MS) SINGLE CRYSTAL SURFACES;    SURFACE ELECTRONIC PHENOMENA;   

DOI  :  10.1016/0039-6028(95)00053-4

来源: Elsevier

【 摘 要 】

The processes of electron transfer and dissociative scattering are explored for collisions of hyperthermal NO+ on GaAs(110). The experiments reveal a marked angular dependence to O- emergence. A strong correlation between the O(-)scattering angle and the final atom-surface interaction site provides a map of the lateral dependence to reactivity. The results are modeled by sequential neutralization, dissociation, and electron attachment steps. Classical trajectory calculations, in conjunction with an empirical opacity function, accurately reproduce the experimental results. The opacity function is interpreted as the probability that an electron will attach to a departing O fragment as a function of the last surface site the atom impacts. The experiments indicate that O- emergence occurs predominantly for oxygen atoms which come in close contact with the localized dangling bond states of GaAs(110).

【 授权许可】

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