Film-substrate interface mixing in the energetic deposition of Ag on Cu(001)

SURFACE SCIENCE

卷:442

Article

Trushin, OS ; Kokko, K ; Salo, PT

关键词: alloys;    computer simulation;    copper;    growth;    metal-metal interfaces;    metal-metal non-magnetic thin film structures;    molecular dynamics;    silver;   

DOI  :  10.1016/S0039-6028(99)00955-3

来源: Elsevier

【 摘 要 】

Molecular dynamics simulations are performed to investigate the interface mixing between the growing film and the substrate during energetic (3-9 eV) deposition of Ag on Cu(001). The statistics of single Ag atom impacts on a Cu(001) surface are presented with respect to the impact energy, substrate temperature, and different angles of incidence. It is shown that the probability of exchange is at its highest in the vicinity of a bridge position between two surface atoms. Furthermore, it is shown that incidence at certain directions leads to great intermixing. In addition, the direct simulations of the deposition process of Ag atoms on Cu(001) are performed, and the growth of a film and the creation of a metastable alloy near the interface are monitored as a function of time. The concentration profiles are then investigated with a simple model based on the probability of a single exchange event. (C) 1999 Elsevier Science B.V. All rights reserved.

【 授权许可】

Free