Infrared induced visible emission from porous silicon: The mechanism of anodic oxidation

SURFACE SCIENCE

卷:370

Article

关键词: electrochemical methods;    electroluminescence;    models of surface chemical reactions;    oxidation;    porous silicon;    semiconductor-electrolyte interfaces;   

DOI  :  10.1016/S0039-6028(96)00960-0

来源: Elsevier

【 摘 要 】

The visible luminescence caused by anodic oxidation of p-type porous silicon has been studied. It is shown that similar luminescence can be observed in n-type material by illumination with near-infrared light. Addition of a suitable reducing agent to the electrolyte solution can both suppress the oxidation of the porous layer and quench its luminescence. These results confirm a previously suggested mechanism, in which the capture of a valence band hole in a surface bond of the porous semiconductor gives rise to a surface state intermediate capable of thermally injecting an electron into the conduction band.

【 授权许可】

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