STM investigation of the initial adsorption stage of Bi on Si(100)-(2 x 1) and Ge(100)-(2 x 1) surfaces

SURFACE SCIENCE

卷:482

Article; Proceedings Paper

Bulavenko, SY ; Koval, IF ; Melnik, PV ; Nakhodkin, NG ; Zandvliet, HJW

关键词: scanning tunneling microscopy;    bismuth;    silicon;    germanium;    surface diffusion;   

DOI  :  10.1016/S0039-6028(01)00804-4

来源: Elsevier

【 摘 要 】

Scanning tunneling microscopy has been used to investigate the initial adsorption stage of Bi on Si(1 0 0) and Ge(1 0 0) surfaces at room temperature. The most favorable position for a Bi ad-dimer on both surfaces is the B-configuration (Bi ad-dimer positioned on-top of the substrate rows with its dimer bond aligned along the substrate dimer row direction). For Si(1 0 0) the A-type dimers (dimer bond aligned perpendicular to the substrate dimer row direction) occasionally rotate back and forth to a B-configuration. The diffusion rates of B-type and A-type dimers along the substrate row and the B-A, A-B rotations on Si(1 0 0) are extracted from an analysis of many sequences of STM images. Finally, it is shown that the presence of an attractive interaction between Bi ad-dimers (irrespective of their orientation) positioned on neighboring substrate dimer rows leads to the formation of local regions with a 2 x 2 reconstruction. (C) 2001 Published by Elsevier Science B.V.

【 授权许可】

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