Pseudogap behavior in Pr0.5Sr0.5MnO3: A photoemission study

SURFACE SCIENCE

卷:605

Article

Pal, Prabir^1,2  Dalai, M. K.³  Ulfat, I.^1,4 

[1] Lund Univ, MAX Lab, SE-22100 Lund, Sweden

[2] Uppsala Univ, Dept Phys & Astron, SE-75121 Uppsala, Sweden

[3] Natl Phys Lab, New Delhi 110012, India

[4] Chalmers Univ Technol, Dept Appl Phys, SE-41296 Gothenburg, Sweden

关键词: Electronic structure;    Photoemission;    Colossal magnetoresistance;   

DOI  :  10.1016/j.susc.2011.01.031

来源: Elsevier

【 摘 要 】

The valence band electronic structure of Pr0.5Sr0.5MnO3 has been investigated across its paramagnetic metallic (PMM)-ferromagnetic metallic (FMM)-antiferromagnetic insulator (AFMI) transition. Using surface sensitive high resolution photoemission we have conclusively demonstrated the presence of a pseudogap of magnitude 80 meV in the near Fermi level electronic spectrum in the PMM and FMM phases and finite intensity at the Fermi level in the charge ordering (CO)-AFMI phase. The pseudogap behavior is explained in terms of the strong electron-phonon interaction and the formation of Jahn Teller UT) polarons, indicating the charge localizations. The finite intensity at the Fermi level in the insulating phase showed a lack of charge ordering in the surface of the Pr0.5Sr0.5MnO3 samples. (C) 2011 Elsevier B.V. All rights reserved.

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