Theoretical investigation on temperature and pressure dependence of structural stability of InP thin layers grown on InP(111)A surface

SURFACE SCIENCE

卷:610

Article

Yamashita, T.¹  Akiyama, T.¹  Nakamura, K.¹  Ito, T.¹ 

[1] Mie Univ, Dept Engn Phys, Tsu, Mie 5148507, Japan

关键词: InP(111)A;    Crystal structure;    First-principles calculations;    Wurtzite;    Zinc blende;   

DOI  :  10.1016/j.susc.2012.12.019

来源: Elsevier

【 摘 要 】

The growth processes of InP epitaxial layers on InP(111)A P-stabilized surface are theoretically investigated by using our first-principles-based approach which incorporates the growth conditions such as temperature and pressure. Our calculations for adsorption of In and P atoms reveal that the wurtzite structure is feasible at high temperatures with low V/III ratio conditions. On the other hand, at low temperatures with high V/III ratio conditions, the adsorption of P atoms occurs on the surface with In coverage of 025, leading to the formation of rotational twins. These results thus imply that the adsorption of P atoms depending on growth conditions plays a role in determining the crystal structure of epitaxial layers on InP(111)A substrates. (C) 2013 Elsevier B.V. All rights reserved.

【 授权许可】

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