Si nanostripe formation on vicinal Ge(100) surfaces

SURFACE SCIENCE

卷:574

Article

Tegenkamp, C ; Pfnür, H

关键词: Ge(100);    silicon;    adsorption;    LEED;    selective growth;   

DOI  :  10.1016/j.susc.2004.10.049

来源: Elsevier

【 摘 要 】

Kinetic growth modes of Si in the submonolayer regime on vicinal Ge(100) surfaces miscut by 2.7degrees and 5.4degrees towards the [011] direction were investigated using low energy electron diffraction (LEED) and photoelectron spectroscopy (XPS, UPS). At a Si coverage around 0.5ML and temperatures between 470 and 600K Si nanostripes separated by Ge nanostripes are formed due to preferential nucleation of Si adatoms on the (1 x 2)-reconstructed Ge(100) domains. At room temperature both Ge(100) domains are covered by pseudomorphic Si islands. The stability of the Ge-Si stripe structure is limited to 600K above which alloy formation was found by photoelectron spectroscopy. (C) 2004 Elsevier B.V. All rights reserved.

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