Adsorption of O and Cl on Tl/Si(111)-Suppressed spin polarization via bilayer formation

SURFACE SCIENCE

卷:696

Article

Pieczyrak, B.¹  Jurczyszyn, L.¹  Radny, M. W.^2,3 

[1] Univ Wroclaw, Inst Expt Phys, Pl Maxa Borna 9, PL-50204 Wroclaw, Poland

[2] Poznan Univ Tech, Inst Phys, Ul Piotrowo 3, PL-60965 Poznan, Poland

[3] Univ Newcastle, Sch Math & Phys Sci, Callaghan, NSW 2308, Australia

关键词: DFT;    Semiconductor;    Spin orbit;    Rashba effect;    Si(111);    Tl;   

DOI  :  10.1016/j.susc.2020.121598

来源: Elsevier

【 摘 要 】

Adsorption of O and Cl on Tl/Si(111) is studied using density functional theory. The surface of the Cl-Tl/Si(111) system was found to be metallic while that for O-Tl/Si(111), semiconducting. It is found, however, that the O/Tl and Cl/Tl interactions in Tl/Si(111) are very similar in nature and lead to the formation of the Tl-O and Tl-Cl bilayers weakly bonded to the Si(111)-1 x 1 substrate. The spin polarization of the Tl-induced gap states, originally present in Tl/Si(111), is also suppressed in both systems.

【 授权许可】

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