Intrinsic point defects in thermoelectric half-Heusler alloys

SCRIPTA MATERIALIA

卷:83

Article

Chai, Yaw Wang^1,2  Yoshioka, Kentaro²  Kimura, Yoshisato² 

[1] Japan Sci & Technol Agcy, ALCA, Kawaguchi, Saitama 3320012, Japan

[2] Tokyo Inst Technol & Engn, Interdisciplinary Grad Sch Sci & Engn, Dept Mat Sci, Midori Ku, Yokohama, Kanagawa 2268502, Japan

关键词: Half-Heusler alloys;    Nanoscale Heusler bands;    Lattice point defects;    Lattice strain;    Thermal conductivity;   

DOI  :  10.1016/j.scriptamat.2014.03.025

来源: Elsevier

【 摘 要 】

The single-phase half-Heusler microstructure of ZrNiSn, (Zr-0.5, Hf-0.5)NiSn and Zr(Ni, Co-0.2)Sn alloys was found to contain a high density of Heusler lattice bands 2-7 nm wide. These nanoscale Heusler lattice bands originated from clustering of Ni and/or Co antisites via occupation of structural vacancies by excess Ni or (Nid+Co) concentrations. The presence of these lattice point defects and their subsequent clustering could result in the reduction of thermal conductivity of the half-Heusler alloys. (C) 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

【 授权许可】

Free