Nitrogen doped cuprous oxide as low cost hole-transporting material for perovskite solar cells

SCRIPTA MATERIALIA

卷:153

Article

Han, Guifang¹  Du, Wen Han^2,3  An, Bao-Li⁴  Bruno, Annalisa¹  Leow, Shin Woei³  Soci, Cesare⁵  Zhang, Sam⁶  Mhaisalkar, Subodh G.^1,3  Mathews, Nripan^1,3 

[1] Nanyang Technol Univ, ERI N, Res Techno Plaza,X Frontier Block,Level 5, Singapore 637553, Singapore

[2] Changzhou Inst Technol, Changzhou 213002, Jiangsu, Peoples R China

[3] Nanyang Technol Univ, Sch Mat Sci & Engn, Nanyang Ave, Singapore 639798, Singapore

[4] Shanghai Univ, Coll Sci, Dept Chem, Shanghai 200444, Peoples R China

[5] Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, 21 Nanyang Link, Singapore 637371, Singapore

[6] Southwest Univ, Fac Mat & Energy, Chongqing 400715, Peoples R China

关键词: Perovskite;    Solar cell;    Hole-transporting material;    Nitrogen doped cuprous oxide;   

DOI  :  10.1016/j.scriptamat.2018.04.049

来源: Elsevier

【 摘 要 】

Substituting expensive traditional hole transporting material (HTM) with cheaper inorganics is a key factor for perovskite photovoltaics commercialization. Cu2O is a promising p-type semiconductor exhibiting good band alignment with perovskite. However, due to solvent and temperature incompatibility, Cu2O is typically employed in inverted configuration, where an even more expensive, unstable Phenyl-C61 -butyric acid methyl ester is necessary as an electron-transporting layer. Therefore, we explored the use of sputtered nitrogen-doped Cu2O directly on halide-perovskite as a HTM. With a thin interfacial layer, efficiency of 15.73% was achieved. This work indicates the possibility of low cost sputtered inorganics as HTM for efficient perovskite photovoltaics. (C) 2018 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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