Effect of grain boundary grooves at the crystal/melt interface on impurity accumulation during the unidirectional growth of multicrystalline silicon

SCRIPTA MATERIALIA

卷:117

Article

Mokhtari, Morgane¹  Fujiwara, Kozo¹  Koizumi, Haruhiko¹  Nozawa, Jun¹  Uda, Satoshi¹ 

[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Katahira 2-1-1, Sendai, Miyagi 9808577, Japan

关键词: Crystal/melt interface;    Segregation;    Grain boundary;   

DOI  :  10.1016/j.scriptamat.2016.02.027

来源: Elsevier

【 摘 要 】

Impurity accumulation at the grain boundaries in multicrystalline Si (mc-Si) was investigated by in situ observation of the crystal/melt interface, analysis of the grain boundary characteristics, and measurement of impurity concentrations. The impurity concentration was higher at grain boundaries that formed a groove at the crystal/melt interface than that at regions which did not form a groove at the crystal/melt interface. We conclude that groove formation at the crystal/melt interface is the cause of impurity accumulation at the grain boundary. (C) 2016 Elsevier Ltd. All rights reserved.

【 授权许可】

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