Bonding technology based on solid porous Ag for large area chips

SCRIPTA MATERIALIA

卷:146

Article

Chen, Chuantong¹  Noh, Seungjun^1,2  Zhang, Hao^1,2  Choe, Chanyang^1,2  Jiu, Jinting¹  Nagao, Shijo¹  Suganuma, Katsuaki¹ 

[1] Osaka Univ, Inst Sci & Ind Res, Mihogaoka 8-1, Osaka 5670047, Japan

[2] Osaka Univ, Grad Sch Engn, Div Adapt Syst, 2-1 Yamadaoka Suita, Osaka 5650871, Japan

关键词: Porous Ag structure;    Large area bonding;    Hillock growth;    Bonding mechanism;    Stress-induced migration;    Power electronic module;   

DOI  :  10.1016/j.scriptamat.2017.11.035

来源: Elsevier

【 摘 要 】

A bonding technology is introduced by using surface polished porous Ag in die-attachment structure. Bonding strength did not change much as the chip size varied from 3 x 3 mm(2) to 15 x 15 mm(2). This confirms that the technology was not influenced by the chip size, and thus can be used in large area bonding. Bonding mechanism based on stress-induced migration was discussed with the three dimensional finite element analyses. Transmission electron microscopy (TEM) observation further confirmed that single crystal hillocks and Ag particles formed at the bonding interface, bridging the interface together. (C) 2017 Acta Materialia Inn Published by Elsevier Ltd. All rights reserved.

【 授权许可】

Free