Strain relaxation in epitaxial Ge crystals grown on patterned Si(001) substrates

SCRIPTA MATERIALIA

卷:127

Article

Dasilva, Yadira Arroyo Rojas¹  Rossell, Marta D.¹  Isa, Fabio^1,2  Erni, Rolf¹  Isella, Giovanni^3,4,5  von Kanel, Hans^1,2  Groning, Pierangelo⁶ 

[1] EMPA, Electron Microscopy Ctr, Swiss Fed Labs Mat Sci & Technol, Uberlandstr 129, CH-8600 Dubendorf, Switzerland

[2] ETH, Solid State Phys Lab, Otto Stern Weg 1, CH-8093 Zurich, Switzerland

[3] Politecn Milan, L NESS, Via Anzani 42, I-22100 Como, Italy

[4] Politecn Milan, Dept Phys, Via Anzani 42, I-22100 Como, Italy

[5] IFN CNR, Via Anzani 42, I-22100 Como, Italy

[6] EMPA, Dept Adv Mat & Surfaces, Swiss Fed Labs Mat Sci & Technol, Uberlandstr 129, CH-8600 Dubendorf, Switzerland

关键词: Dislocations;    Stacking Faults;    Twins;    HAADF-STEM;    Ge;   

DOI  :  10.1016/j.scriptamat.2016.09.003

来源: Elsevier

【 摘 要 】

In this paper we report on the defects formed in Ge crystals grown on Si(001) pillars upon strain relaxation. The analysis is performed by high-angle annular dark-field scanning transmission electron microscopy. The strain relaxation happens by means of 60 and 90 misfit dislocations with Burgers vectors (b) over right arrow = 1/2 110 . Misfit dislocations may split forming partial dislocations with Burgers vectors (b) over right arrow = 1/6 112 , and are separated by a stacking fault. Besides, intrinsic stacking faults in different {111} planes interact and annihilate each other forming stair rod dislocations. Coherent and incoherent twin boundaries of the Sigma 3{111} and Sigma 3{112} types are also found in the Ge. (C) 2016 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

【 授权许可】

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