Non-diffusional growth mechanism of I1 basal stacking-faults inside twins in hcp metals

SCRIPTA MATERIALIA

卷:172

Article

Ostapovets, Andriy¹  Serra, Anna²  Pond, Robert C.³ 

[1] Acad Sci Czech Republ, Cent European Inst Technol, Inst Phys Mat CEITEC IPM, Zizkova 22, Brno 61662, Czech Republic

[2] Univ Politecn Cataluna, Dept Civil & Environm Engn, Jordi Girona 1-3, Barcelona 08034, Spain

[3] Univ Exeter, Coll Engn Math & Phys Sci, Exeter EX4 4QF, Devon, England

关键词: Twinning;    Plastic deformation;    Grain interfaces;    Interface defects;    Dislocations;   

DOI  :  10.1016/j.scriptamat.2019.07.024

来源: Elsevier

【 摘 要 】

Deformation twins in magnesium exhibit considerable densities of I-1 basal-plane stacking-faults. Since these faults generally transect their host twin, they presumably lengthen concommitantly with boundary migration during twin growth. We investigate this process using atomic-scale simulation for {10 (1) over bar2} and {10 (1) over bar1} twinning. It is demonstrated first that the intersection of a stacking-fault with a stationary twin boundary is delineated by a sessile imperfect disconnection. Subsequently, by applying a shear strain, we stimulate twin growth by the passage of twinning disconnections along twin boundaries, and show that these are able to propagate through such pre-existing imperfect disconnections in a conservative manner. (C) 2019 Acta Materialia Inc Published by Elsevier Ltd. All rights reserved.

【 授权许可】

Free