Dynamic interaction between grain boundary and stacking fault tetrahedron

SCRIPTA MATERIALIA

卷:144

Article

Zhang, Liang^1,2  Lu, Cheng¹  Tieu, Kiet¹  Shibuta, Yasushi² 

[1] Univ Wollongong, Sch Mech Mat & Mechatron Engn, Wollongong, NSW 2522, Australia

[2] Univ Tokyo, Dept Mat Engn, Bunkyo Ku, Tokyo 1138656, Japan

关键词: Molecular dynamics;    Grain boundary;    Vacancy;    Dislocation;   

DOI  :  10.1016/j.scriptamat.2017.09.027

来源: Elsevier

【 摘 要 】

We utilize molecular dynamics simulations to investigate the dynamic interaction between the grain boundary (GB) and the stacking fault tetrahedron (SFT) in bicrystal copper. The grain boundary can migrate itself under the shear strain and can serve as a sink to remove SFT. The sink efficiency of grain boundaries is sensitive to their structural characteristics. The high-angle GBs can show a great ability to remove SFT even at an extreme low temperature, while the increase of temperature can facilitate the annihilation of SFT at the low-angle GBs. This study reveals a new possible GB-mediated damage healing mechanism of irradiated materials. (C) 2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

【 授权许可】

Free