Sintering temperature dependence of thermoelectric performance in CuCrSe2 prepared via mechanical alloying

SCRIPTA MATERIALIA

卷:127

Article

Yan, Yanci¹  Guo, Lijie¹  Zhang, Zhi³  Lu, Xu¹  Peng, Kunling^1,2  Yao, Wei¹  Dai, Jiyan³  Wang, Guoyu²  Zhou, Xiaoyuan¹ 

[1] Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China

[2] Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China

[3] Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China

关键词: CuCrSe2;    Single phase;    Layered structure;    PLEC;   

DOI  :  10.1016/j.scriptamat.2016.09.016

来源: Elsevier

【 摘 要 】

CuCrSe2 compounds were synthesized by mechanical alloying followed by annealing and spark plasma sintering at temperatures of 873 K, 923 K, 973 K and 1023 K. Our investigation revealed that high SPS temperature (above 973 K) is the key to obtaining CuCrSe2 single phase completely free of a metallic secondary phase CuCr2Se4. The ultralow thermal conductivity caused by the Cu ions disorder, complex layered structure and dislocation leads to the favorable thermoelectric performance in CuCrSe2 compound. A maximum ZT value over 0.75@873 K is achieved in the absolutely pure sample sintered at 1023 K. (C) 2016 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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