Disordered dislocation configuration in submicrometer Al crystal subjected to plane strain bending

SCRIPTA MATERIALIA

卷:113

Article

Hu, T.¹  Ma, K.¹  Topping, T. D.¹  Jiang, L.¹  Zhang, D.¹  Mukherjee, A. K.¹  Schoenung, J. M.¹  Lavernia, E. J.¹ 

[1] Univ Calif Davis, Dept Chem Engn & Mat Sci, Davis, CA 95616 USA

关键词: In-situ TEM;    Submicrometer pillars;    Strain bending;    Dislocation configuration;    Low angle grain boundary;   

DOI  :  10.1016/j.scriptamat.2015.10.008

来源: Elsevier

【 摘 要 】

Bending tests of submicrometer Al pillars were performed in-situ in a transmission electron microscope (TEM). The Al crystal in the bent region experienced substantial lattice distortion, as well as grain refinement resulting in a disordered dislocation configuration arising from a random distribution of low angle grain boundaries (LAGBs). This observed disordered dislocation configuration is in contrast to formation of a low energy dislocation configuration, as predicted on the basis of the theory of strain gradient plasticity, for bulk materials subjected to plane strain bending. (C) 2015 Elsevier Ltd. All rights reserved.

【 授权许可】

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