Formation and growth of stacking fault tetrahedra in Ni via vacancy aggregation mechanism

SCRIPTA MATERIALIA

卷:114

Article

Aidhy, Dilpuneet S.^1,2  Lu, Chenyang³  Jin, Ke²  Bei, Hongbin²  Zhang, Yanwen²  Wang, Lumin³  Weber, William J.^2,4 

[1] Univ Wyoming, Dept Mech Engn, Laramie, WY 82071 USA

[2] Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA

[3] Univ Michigan, Dept Nucl Engn & Radiol Sci, Ann Arbor, MI 48109 USA

[4] Univ Tennessee, Mat Sci & Engn, Knoxville, TN 37996 USA

关键词: Molecular dynamics;    Diffusion;    Point defect;    Stacking fault tetrahedra;   

DOI  :  10.1016/j.scriptamat.2015.12.020

来源: Elsevier

【 摘 要 】

Using molecular dynamics simulations, the formation and growth of stacking fault tetrahedra (SFT) are captured by vacancy cluster diffusion and aggregation mechanisms in Ni. The vacancy-tetrahedron acts as a nucleation point for SFT formation. Simulations show that perfect SFT can grow to the next size perfect SFT via a vacancy aggregation mechanism. The stopping and range of ions in matter (SRIM) calculations and transmission electron microscopy (TEM) observations reveal that SFT can form farther away from the initial cascade-event locations, indicating the operation of diffusion-based vacancy-aggregation mechanism. (C) 2015 Elsevier Ltd. All rights reserved.

【 授权许可】

Free