Comparison of the grain growth behavior and defect structures of flash sintered ZnO with and without controlled current ramp

SCRIPTA MATERIALIA

卷:162

Article

Phuah, Xin Li¹  Wang, Han¹  Charalambous, Harry²  Jha, Shikhar Krishn²  Tsakalakos, Thomas²  Zhang, Xinghang¹  Wang, Haiyan^1,3 

[1] Purdue Univ, Sch Mat Engn, W Lafayette, IN 47907 USA

[2] Rutgers State Univ, Dept Mat Sci & Engn, New Brunswick, NJ 08901 USA

[3] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

关键词: Flash sintering;    Controlled current ramp;    ZnO;    Microstructure;    TEM;   

DOI  :  10.1016/j.scriptamat.2018.11.009

来源: Elsevier

【 摘 要 】

During the flash sintering of ceramics, rapid densification occurs during the non-linear increase in current. To investigate the effect of an abrupt increase in current, a detailed microstructure characterization of flash sintered ZnO samples has been conducted and compared to a sample with controlled current ramp (i.e linear increase of current). It has been found that the rapid densification during flash sintering limits the grain growth leading to finer grain sizes compared to the sample with a controlled current ramp. Stacking faults have been observed in the microstructure of both samples due to the generation of point defects. (C) 2018 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

【 授权许可】

Free