Heavy-ion induced damage of crystalline Ge and W in the 0.5-8 A MeV range

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:146

Article; Proceedings Paper

Huber, H ; Assmann, W ; Karamian, SA ; Mieskes, HD ; Nolte, H ; Gazis, E ; Kokkoris, M ; Kossionides, S ; Vlastou, R ; Grötzschel, R ; Mücklich, A ; Prusseit, W

关键词: swift heavy ions;    crystals;    damage;    channeling;   

DOI  :  10.1016/S0168-583X(98)00514-X

来源: Elsevier

【 摘 要 】

High energy heavy-ion induced damage of Ge and W crystals was studied by blocking and channeling. Beams of ions from C to Au with energies from 12 to 266 MeV were used both for damaging the crystal and for in-situ measurement of lattice disordering. The blocking minimum yield and angular half-width have been measured as a function of dose, and it is shown that the relative ion damaging efficiency for Ge decreases at high electronic energy-loss values. The mechanism of microannealing along the ion path is discussed. The saturation and dose-rate dependence of damage are explained in terms of defect mobility and recombination processes. For a W crystal the initial damaging power is proportional to the number of displacements predicted by TRIM and a disorder saturation is observed at high doses. (C) 1498 Elsevier Science B.V. All rights reserved.

【 授权许可】

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