Comparing deuterium retention in tungsten films measured by temperature programmed desorption and nuclear reaction analysis

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:300

Article

Wang, P.¹  Jacob, W.¹  Gao, L.¹  Duerbeck, T.¹  Schwarz-Selinger, T.¹ 

[1] Max Planck Inst Plasma Phys, EURATOM Assoc, D-85748 Garching, Germany

关键词: Tungsten;    Deuterium retention;    Nuclear reaction analysis;    Thermal desorption spectroscopy;   

DOI  :  10.1016/j.nimb.2013.01.057

来源: Elsevier

【 摘 要 】

Tungsten (W) films with thicknesses ranging between 1 and 12 mu m deposited by magnetron sputtering on silicon substrates were used as a model system for comparing the deuterium (D) retention measured by both temperature programmed desorption (TPD) and nuclear reaction analysis (NRA). Samples were loaded with deuterium ex-situ with an ECR plasma at 370 and 600 K with an energy of 38 eV per deuteron. To avoid diffusion of D into the silicon substrate and to increase adhesion a copper interlayer was applied. The results show that all implanted D atoms were retained exclusively in the W films. The distribution of D is homogenous throughout the W layer with an atomic fraction of 3 +/- 0.4 x 10(-3). With increasing W thickness the D profile extends to correspondingly larger depths with practically identical D concentration. For W films with a thickness lower than the NRA information depth of about 8 mu m the total retained D amount measured by TPD and NRA is in excellent agreement. As expected, for films thicker than the NRA information depth, TPD deviates from NRA. (c) 2013 Elsevier B.V. All rights reserved.

【 授权许可】

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