Ion induced segregation in gold nanostructured thin films on silicon

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:266

Article

Ghatak, J.¹  Satyam, P. V.¹ 

[1] Inst Phys, Bhubaneswar 751005, Orissa, India

关键词: Gold nanostructures;    MeV ion irradiation;    Diffusion;    Segregation;    Amorphous silicon;   

DOI  :  10.1016/j.nimb.2008.08.012

来源: Elsevier

【 摘 要 】

We report a direct observation of segregation of gold atoms to the near surface regime due to 1.5 MeV Au2+ ion impact on isolated gold nanostructures deposited on silicon. Irradiation at fluences of 6 x 10(13), 1 x 10(14) and 5 x 10(14) ions cm(-2) at a high beam flux of 6.3 x 10(12) ions cm(-2) s(-1) show a maximum transported distance of gold atoms into the silicon substrate to be 60, 45 and :23 nm, respectively. At a lower fluence (6 x 10(13) ions cm(-2)) transport has been found to be associated with the formation of gold silicide (Au5Si2). At a high fluence value of 5 x 10(14) ions cm(-2), disassociation of gold silicide and out-diffusion lead to the segregation of gold to defect - rich surface and interface regions. (C) 2008 Elsevier B.V. All rights reserved.

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