Modelling of deposition processes on the TiO2 rutile (110) surface

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:267

Article; Proceedings Paper

Vernon, L. J.¹  Smith, Roger¹  Kenny, S. D.¹ 

[1] Univ Loughborough, Dept Math Sci, Loughborough LE11 3TU, Leics, England

关键词: Computer simulations;    Molecular dynamics;    Deposition;    Titania;    Film growth;   

DOI  :  10.1016/j.nimb.2009.06.093

来源: Elsevier

【 摘 要 】

Deposition of TixOy clusters onto the rutile TiO2 (110) surface has been modelled using empirical potential based molecular dynamics. Deposition energies in the range 10-40 eV have been considered so as to model typical deposition energies of magnetron sputtering. Defects formed as a function of both the deposition energy and deposition species have been studied. The results show that in the majority of cases Ti interstitial atoms are formed, irrespective of whether Ti was contained within the deposited cluster. Furthermore that the majority of these interstitials are formed by displacing a surface Ti atom into the interstitial site. O surface atoms are also relatively common, with Ti and TiO2 surface units often occurring when the deposited cluster contains Ti but becoming less frequent as the deposition energy is increased. Structures that would give rise to the growth of further layers of rutile are not observed and in the majority of the simulations the energy barriers for diffusion of the end-products is high. (C) 2009 Elsevier B.V. All rights reserved.

【 授权许可】

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