Three-dimensional Finite Elements Method simulation of Total Ionizing Dose in 22 nm bulk nFinFETs

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:393

Article; Proceedings Paper

Chatzikyriakou, Eleni¹  Potter, Kenneth¹  Redman-White, William¹  De Groot, C. H.¹ 

[1] Univ Southampton, Dept Elect & Comp Sci, Southampton SO9 5NH, Hants, England

关键词: Total Ionizing Dose;    Finite Elements Method;    Synopsys;    Simulation;    FinFET;    Shallow Trench Isolation;   

DOI  :  10.1016/j.nimb.2016.09.007

来源: Elsevier

【 摘 要 】

Finite Elements Method simulation of Total Ionizing Dose effects on 22 nm bulk Fin Field Effect Transistor (FinFET) devices using the commercial software Synopsys Sentaurus TCAD is presented. The simulation parameters are extracted by calibrating the charge trapping model to experimental results on 400 nm SiO2 capacitors irradiated under zero bias. The FinFET device characteristics are calibrated to the Intel 22 nm bulk technology. Irradiation simulations of the transistor performed with all terminals unbiased reveal increased hardness up to a total dose of 1 MRad(SiO2). (C) 2016 The Authors. Published by Elsevier B.V.

【 授权许可】

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