Stress vs sputtering effects in the propagation of surface ripples produced by ion-beam sputtering

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:365

Article

Moreno-Barrado, A.^1,2  Castro, M.^2,3  Munoz-Garcia, J.^4,5  Cuerno, R.^4,5 

[1] Univ Pontificia Comillas, IIT, E-28015 Madrid, Spain

[2] Univ Pontif Comillas, GISC, E-28015 Madrid, Spain

[3] Univ Pontificia Camillas, Grp Dinam Lineal DNL, Escuela Tecn Super Ingn ICAI, E-28015 Madrid, Spain

[4] Univ Carlos III Madrid, Dept Matemat, E-28911 Leganes, Spain

[5] Univ Carlos III Madrid, GISC, E-28911 Leganes, Spain

关键词: Surface nanostructuring;    Ion-beam sputtering;    Continuum models;    Stress-induced viscous flow;    Ripple velocity;   

DOI  :  10.1016/j.nimb.2015.07.032

来源: Elsevier

【 摘 要 】

Under low energy ion irradiation, periodic features (ripples) can develop on the surfaces of semiconductor materials, with typical sizes in the nanometric range. Recently, a theory of pattern formation has been able to account for the variability with the ion/target combination of the critical angle value separating conditions on ion incidence that induce the presence or the absence of ripples. Such a theory is based in the accumulation of stress in the damaged irradiated layer and its relaxation via surface-confined viscous flow. Here we explore the role of stress, and its competition with purely erosive mechanisms, to determine the sign of the velocity with which the ripple pattern moves across the target plane. Based on this theory, we discuss different situations and make specific testable predictions for the change of sign in that velocity. (C) 2015 Elsevier B.V. All rights reserved.

【 授权许可】

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