Heat treatment of ion-irradiated silica-based thin films

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:447

Article

Shojaee, S. A.¹  Qi, Y.²  Wang, Y. Q.³  Prenzel, T.⁴  Mehner, A.⁴  Lucca, D. A.² 

[1] Amethyst Res Inc, 123 Case Circle, Ardmore, OK 73401 USA

[2] Oklahoma State Univ, Sch Mech & Aerosp Engn, Stillwater, OK 74078 USA

[3] Los Alamos Natl Lab, Div Mat Sci & Technol, Los Alamos, NM 87545 USA

[4] Leibniz Inst Werkstofforientierte Technol, Badgasteiner Str 3, D-28359 Bremen, Germany

关键词: Raman spectroscopy;    FT-IR spectroscopy;    Sol-gel processing;    Ion irradiation;   

DOI  :  10.1016/j.nimb.2019.03.044

来源: Elsevier

【 摘 要 】

The microstructural relaxation caused by heat treatment of ion-irradiated silica-based thin films was investigated. Hybrid organic-inorganic silica-based thin films were synthesized via a sol-gel process and were irradiated with 125 keV H+ or 250 keV N2+ ions with fluences of 10(15) or 10(16) ions/cm(2). Ion irradiation was followed by heat treatment at 1100 degrees C or 1350 degrees C in an inert Ar atmosphere. The microstructure of the irradiated films before and after heat treatment was studied with a combination of Raman and infrared spectroscopies. The results indicated that while ion irradiation led to a defective structure of silica and graphitic C nanodomains, subsequent heat treatment led to structural relaxation and atomic reconfiguration of both silica and C. After heat treatment at 1100 degrees C, the microstructure of the films consisted of nanocrystalline graphite and structurally relaxed silica. After secondary heat treatment at 1350 degrees C, most of the C within the films vanished and the film microstructure only consisted of alpha-cristobalite silica.

【 授权许可】

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