Radiation defect dynamics in solids studied by pulsed ion beams

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:460

Article; Proceedings Paper

Wallace, J. B.^1,2  Aji, L. B. Bayu¹  Kucheyev, S. O.¹ 

[1] Lawrence Livermore Natl Lab, Livermore, CA 94550 USA

[2] Texas A&M Univ, Dept Nucl Engn, College Stn, TX 77843 USA

关键词: Damage;    Radiation effects;    Channeling;    Si;    Dynamics;   

DOI  :  10.1016/j.nimb.2018.10.044

来源: Elsevier

【 摘 要 】

The buildup of radiation damage is often a dynamic phenomenon proceeding via migration and interaction of point defects ballistically generated in collision cascades. Here, we describe how the dynamic aspects of damage formation via inter-cascade defect interaction can be studied by pulsed ion beam bombardment. We illustrate the pulsed beam method by an example for Si bombarded at 100 degrees C with 1.35 MeV Xe ions and compare with previously reported data for 0.5 MeV Xe ion irradiation. Results reveal that the time constant of defect relaxation strongly depends on both ion energy and the depth from the sample surface. This observation cannot be entirely explained as an effect of the collision cascade density on defect interaction dynamics, based on depth dependencies of cascade densities calculated with a recently developed model that accounts for the fractal nature of cascades. There results call for future systematic studies to better understand ion energy and cascade density effects on defect relaxation dynamics in Si.

【 授权许可】

Free