Vacancy effects on the formation of He and Kr cavities in 3C-SiC irradiated and annealed at elevated temperatures

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:389

Article

Zang, Hang¹  Jiang, Weilin²  Liu, Wenbo¹  Devaraj, Arun²  Edwards, Danny J.²  Henager, Charles H., Jr.²  Kurtz, Richard J.²  Li, Tao¹  He, Chaohui¹  Yun, Di¹  Wang, Zhiguang³ 

[1] Xi An Jiao Tong Univ, Dept Nucl Sci & Technol, Xian 710049, Peoples R China

[2] Pacific Northwest Natl Lab, Richland, WA 99352 USA

[3] Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China

关键词: He and Kr cavities;    Vacancy effect;    High-temperature annealing;    Ion irradiation;    3C-SiC;   

DOI  :  10.1016/j.nimb.2016.11.017

来源: Elsevier

【 摘 要 】

Polycrystalline 3C-SiC was sequentially irradiated at 400 and 750 degrees C with 120 keV He2+ and 4 MeV Kr15+ ions to 10(17) and 4 x 10(16) cm(-2), respectively. The Kr15+ ions penetrated the entire depth region of the He2+ ion implantation. Three areas of He2+, Kr15+ and He2+ + Kr15+ ion implanted SiC were created through masked overlapping irradiation. The sample was subsequently annealed at 1600 degrees C in vacuum and characterized using cross-sectional transmission electron microscopy and energy-dispersive X-ray spectroscopy. Compared to the He2+ ion only implanted SiC, He cavities show a smaller size and higher density in the co-implanted SiC. At 25 dpa, presence of He in the co-implanted 3C-SiC significantly promotes cavity growth; much smaller voids are formed in the Kr15+ ion only irradiated SiC at the same dose. In addition, local Kr migration and trapping at cavities occurs, but long-range Kr diffusion in SiC is not observed up to 1600 degrees C. (C) 2016 Elsevier B.V. All rights reserved.

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