Dislocation mobility study of heavy ion induced track damage in LiF crystals

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:267

Article; Proceedings Paper

Manika, I.¹  Maniks, J.¹  Toulemonde, M.²  Schwartz, K.³ 

[1] Latvian State Univ, ISSP, LV-1063 Riga, Latvia

[2] CIMAP GANIL, F-14070 Caen 05, France

[3] GSI Darmstadt, D-64219 Darmstadt, Germany

关键词: Ion tracks;    Track etching;    Dislocation mobility;    LiF;   

DOI  :  10.1016/j.nimb.2009.02.019

来源: Elsevier

【 摘 要 】

The track damage created in LiF crystals by swift U, Xe and Kr ions with a specific energy of 11.1 MeV/u Was Studied using dislocation mobility measurements, track etching, SEM, AFM and optical microscopy. The results demonstrate high sensitivity of dislocation mobility to track core damage. The relationship between the energy loss of ions, dislocation mobility and track structure is discussed. (C) 2009 Elsevier B.V. All rights reserved.

【 授权许可】

Free