Characterization of oxygen self-diffusion in TiO2 resistive-switching layers by nuclear reaction profiling

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:441

Article

Sulzbach, M. C.^1,2  Selau, F. F.¹  Trombini, H.¹  Grande, P. L.¹  Marmitt, G. G.¹  Pereira, L. G.¹  Vos, M.³  Elliman, R. G.³ 

[1] Univ Fed Rio Grande do Sul, Ion Implantat Lab, Inst Phys, Av Bento Goncalves 9500,CP 15051, BR-91501970 Porto Alegre, RS, Brazil

[2] Inst Ciencia Mat Barcelona ICMAB CSIC, Campus UAB, Bellaterra 08193, Spain

[3] Australian Natl Univ, Res Sch Phys & Engn, Elect Mat Engn, Canberra, ACT 0200, Australia

关键词: Resistive memories;    Diffusion mechanisms;    Nuclear Reaction Analysis;    Conducting filaments;   

DOI  :  10.1016/j.nimb.2018.11.026

来源: Elsevier

【 摘 要 】

Oxygen self-diffusion was investigated in TiO2 layers employed for resistive-switching memories using resonant nuclear reaction profiling (NRP) and O-18 labeling. The layers were grown using physical vapor deposition technique (sputtering) and were polycrystalline. The diffusivity was measured over the temperature range 600-800 degrees C and the activation energy for oxygen self-diffusion in sputter-deposited TiO2 films determined to be 1.09 +/- 0.16 eV, a value consistent with results obtained by previous studies (Marmitt et al., 2017).

【 授权许可】

Free