Layer morphology analysis of sputter-eroded silicon gratings using Rutherford backscattering

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:269

Article

Langhuth, Hagen¹  Mayer, Matej¹  Lindig, Stefan¹ 

[1] Max Planck Inst Plasma Phys, EURATOM Assoc, D-85748 Garching, Germany

关键词: Surface morphology;    In situ RBS;    SIMNRA;   

DOI  :  10.1016/j.nimb.2011.05.002

来源: Elsevier

【 摘 要 】

The possibility to simulate Rutherford backscattering (RBS) spectra from arbitrary laterally inhomogeneous sample structures was implemented in the SIMNRA code. Layer morphology is modeled by a layer thickness frequency distribution. This method was used to monitor the evolution of the surface morphology of a one dimensional silicon grating on top of a tantalum interlayer in situ. The Si grating was sputtered by argon and carbon ion beams at an incident energy of 6 keV at two different angles of incidence parallel to the grid lines. After each sputtering step the surface was investigated by RBS. The Si grid lines undergo a change of their morphology due to sputtering erosion. The morphology change depends on the sputtering angle and is different for Ar and C bombardment. Sputtering with C leads to the formation of a protective C layer on top, which was confirmed by additional NRA measurements. The results of the RBS measurements were confirmed by scanning electron micrographs of sample cross-sections produced by focused ion beam cross-sectioning. (C) 2011 Elsevier B.V. All rights reserved.

【 授权许可】

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