Swift heavy ion irradiation induced modifications in structural, microstructural, electrical and magnetic properties of Mn doped SnO2 thin films

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:400

Article

Gupta, Sushant¹  Singh, Fouran²  Lalla, N. P.³  Das, B.¹ 

[1] Univ Lucknow, Dept Phys, Lucknow 226007, Uttar Pradesh, India

[2] Inter Univ Accelerator Ctr, New Delhi 110067, India

[3] UGC DAE Consortium Sci Res, Indore 452017, India

关键词: Swift heavy ion;    Transparent conducting oxide;    Dilute magnetic semiconductor;    Thin films;    Point defects;   

DOI  :  10.1016/j.nimb.2017.03.155

来源: Elsevier

【 摘 要 】

In this paper, we have presented the effect of swift heavy ion beam irradiation on the structural, microstructural, electrical and magnetic properties of Sn0.9Mn0.1O2 thin films. The structural and electrical results have been interpreted by using properties of native or point defects, whereas the magnetic and morphological variations have been explained in terms of the conductivity of material. Efforts have been made to summarize the properties of all possible charged and neutral point defects (V-Sn(4-) , Sn-i(4+), V-O(0), O-Sn(2-), S-O(4+), O-sn(2-), H-O(+)) and afterwards from the correlation between experimentally observed and theoretically-calculated results various interesting conclusions have been drawn. (C) 2017 Elsevier B.V. All rights reserved.

【 授权许可】

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