Effect of valence holes kinetics on material excitation in tracks of swift heavy ions

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:365

Article

Rymzhanov, R. A.¹  Medvedev, N. A.²  Volkov, A. E.^1,3,4 

[1] JINR, FLNR, Dubna 141980, Russia

[2] DESY, CFEL, D-22607 Hamburg, Germany

[3] NRC Kurchatov Inst, Moscow 123182, Russia

[4] Russian Acad Sci, LPI, Moscow 119991, Russia

关键词: Swift heavy ion track;    Complex dielectric function;    Monte Carlo;    Aluminum oxide;    Hole diffusion;   

DOI  :  10.1016/j.nimb.2015.08.043

来源: Elsevier

【 摘 要 】

A considerable part of the excess energy of the electronic subsystem of a solid penetrated by a swift heavy ion (SHI) is accumulated in valence holes. Spatial redistribution of these holes can affect subsequent relaxation, resulting in ionizations of new electrons by hole impacts as well as energy transfer to the target lattice. A new version of the Monte Carlo code TREKIS is applied to study this effect in Al2O3 for SHI tracks. The complex dielectric function (CDF) formalism is used to calculate the cross sections of interaction of involved charged particles (an ion, electrons, holes) with the target giving us ability to take into account collective response of a target to excitations. We compare the radial distributions of the densities and energies of excited electrons and valence holes at different times to those obtained under the assumption of immobile holes used in earlier works. The comparison shows a significant difference between these distributions within the track core, where the majority of slow electrons and valence holes are located at femtosecond timescales after the ion impact. The study demonstrates that the energy deposited by valence holes into the lattice in nanometric tracks is comparable to the energy transferred by excited electrons. Radii of structure transformations in tracks produced by these energy exchange channels are in a good agreement with experiments. (C) 2015 Elsevier B.V. All rights reserved.

【 授权许可】

Free