Analysis of plasma enhanced pulsed laser deposition of transition metal oxide thin films using medium energy ion scattering

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:450

Article; Proceedings Paper

Rossall, Andrew K.¹  van den Berg, Jaap A.¹  Meehan, David²  Rajendiran, Sudha²  Wagenaars, Erik² 

[1] Univ Huddersfield, Sch Comp & Engn, Huddersfield HD1 3DH, W Yorkshire, England

[2] Univ York, Dept Phys, York Plasma Inst, York YO10 5DD, N Yorkshire, England

关键词: Medium energy ion scattering;    Nano-layer profiling;    Plasma-enhanced pulsed laser deposition;    Thin film;    Transition metal oxide;    Inductively coupled plasma;   

DOI  :  10.1016/j.nimb.2018.06.023

来源: Elsevier

【 摘 要 】

In this study, plasma-enhanced pulsed laser deposition (PE-PLD), which is a novel variant of pulsed laser deposition that combines laser ablation of metal targets with an electrically-produced oxygen plasma background, has been used for the fabrication of ZnO and Cu2O thin films. Samples prepared using the PE-PLD process, with the aim of generating desirable properties for a range of electrical and optical applications, have been analysed using medium energy ion scattering. Using a 100 keV He+ ion beam, high resolution depth profiling of the films was performed with an analysis of the stoichiometry and interface abruptness of these novel materials. It was found that the PE-PLD process can create stoichiometric thin films, the uniformity of which can be controlled by varying the power of the inductively coupled plasma. This technique showed a high deposition rate of similar to 0.1 nm s(-1).

【 授权许可】

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