Development of Cat-CVD apparatus for 1-m-size large-area deposition

THIN SOLID FILMS

卷:430

Article; Proceedings Paper

Ishibashi, K ; Karasawa, M ; Xu, G ; Yokokawa, N ; Ikemoto, M ; Masuda, A ; Matsumura, H

关键词: catalytic chemical vapor deposition (Cat-CVD);    amorphous silicon;    silicon nitride;    thickness uniformity;   

DOI  :  10.1016/S0040-6090(03)00071-3

来源: Elsevier

【 摘 要 】

Thin film deposition on large-area substrates of 1-m size is demonstrated by catalytic chemical vapor deposition (Cat-CVD) apparatus equipped with a newly developed showerhead catalyzer unit. The arrangement of catalyzer wires for uniform film thickness was determined by simulation, assuming that decomposed species on catalyzers were transported by isotropic thermal diffusion without an influence of the gas flow. A film thickness uniformity of +/-7.5% was successfully achieved on a substrate of 400 mmX960 mm at an average deposition rate of 32 nm/min for hydrogenated amorphous silicon (a-Si:H) film. Film thickness uniformity of +/-8.6% for a-Si:H film and +/-12.3% for silicon nitride film were also successfully obtained on substrates of 680 mmX880 mm size at an average deposition rate of 12.1 and 2.5 nm/min, respectively. These results suggest that Cat-CVD is a promising method for the fabrication of large-area devices such as thin-film-transistor liquid-crystal displays and solar cells. (C) 2003 Elsevier Science B.V. All rights reserved.

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