CuGaSe2-CuGa3Se5 phase transition in CCSVT-grown thin films

THIN SOLID FILMS

卷:511

Article; Proceedings Paper

Lehmann, S. ; Baer, M. ; Marron, D. Fuertes ; Pistor, P. ; Wiesner, S. ; Rusu, M. ; Koetschau, I. ; Lauermann, I. ; Grimm, A. ; Sokoll, S. ; Fischer, Ch. -H. ; Schedel-Niedrig, Th. ; Lux-Steiner, M. Ch. ; Jung, Ch.

关键词: CuGaSe2;    CuGa3Se5;    phase-transition;    CCSVT;    thin-film;    XES;    XRD;   

DOI  :  10.1016/j.tsf.2005.11.067

来源: Elsevier

【 摘 要 】

The system CuGaSe2-CuGa3Se5 in thin films has been investigated. Layer synthesis was carried out by chemical close-spaced vapour transport (CCSVT) using Cu precursors on Mo/soda-lime glass substrates. The extension of deposition times in a two-step process led to final film compositions with [Ga]/[Cu] ratios ranging from 1 to 3, allowing the study of the phase transition mentioned above. Films showing chalcopyrite (1:1:2), OVC (1:3:5) and both phases were grown. X-ray emission spectroscopy and X-ray diffraction (XRD) techniques have been combined for a compositional and structural study of this material system probing both bulk and near surface properties of the films. This analysis was also extended to the rear-surface investigation of selected two-phase thin films and complemented with surface sensitive photoelectron spectroscopy (PES). From these results a growth model is presented for CuGa3Se5 formation in gallium rich, CCSVT-grown CuGaxSey-films. (c) 2006 Published by Elsevier B.V.

【 授权许可】

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