Observation of discrete dopant potential and its application to Si single-electron devices

THIN SOLID FILMS

卷:518

Article; Proceedings Paper

Tabe, Michiharu¹  Moraru, Daniel¹  Ligowski, Maciej^1,2  Anwar, Miftahul¹  Yokoi, Kiyohito¹  Jablonski, Ryszard²  Mizuno, Takeshi¹ 

[1] Shizuoka Univ, Res Inst Elect, Naka Ku, Hamamatsu, Shizuoka 4328011, Japan

[2] Warsaw Univ Technol, Div Sensors & Measuring Syst, PL-02525 Warsaw, Poland

关键词: Single-electron transfer;    Quantum dots;    Single dopant potential;    Silicon-on-insulator;    Kelvin probe force microscope;   

DOI  :  10.1016/j.tsf.2009.10.051

来源: Elsevier

【 摘 要 】

Single-electron devices are attractive because of their ultimate capabilities such as single-electron transfer, single-electron memory, single-photon detection and high sensitivity to elemental amount of charge. We studied single-electron transport in doped nanoscale-channel field-effect transistors in which the channel potential is modulated by ionized dopants. These devices work as arrays of quantum dots with dimensions below present lithography limits. We demonstrate the ability of dopant-induced quantum dot arrays to mediate the transfer of individual electrons one at a time (single-electron transfer). We also monitored the actual dopant distribution and observed single dopant potentials using low temperature Kelvin probe force microscopy. (C) 2009 Elsevier B.V. All rights reserved.

【 授权许可】

Free