Precise Se-flux control and its effect on Cu(In,Ga)Se2 absorber layer deposited at low substrate temperature by multi stage co-evaporation

THIN SOLID FILMS

卷:633

Article; Proceedings Paper

Nishiwaki, Shiro¹  Feurer, Thomas¹  Bissig, Benjamin¹  Avancini, Enrico¹  Carron, Romain¹  Buecheler, Stephan¹  Tiwari, Ayodhya N.¹ 

[1] Empa Swiss Fed Labs Mat Sci & Technol, Lab Thin Films & Photovolta, Ueberlandstr 129, CH-8600 Duebendod

关键词: Cu(In,Ga)Se-2;    In-situ Se flux control system;    Multi stage deposition;    Low substrate temperature;   

DOI  :  10.1016/j.tsf.2016.10.057

来源: Elsevier

【 摘 要 】

In-situ Se flux control system is applied for the growth of Cu(In,Ga)Se-2 (CIGS) absorber layers by a multi stage thermal co-deposition of elements at low substrate temperature below 500 degrees C. It was revealed that the composition depth profile of the [Ga]/([ln]+[Ga]) (GGI) ratio is affected by the [Se]/[Metal] flux ratio. It was observed for the solar cell properties that the change in the depth profiles of GGI induced by the change of [Se]/[Metal] resulted in an increase in the J(sc) and a decrease in the FF, and hence little influence on the efficiency. Under control of [Se]/[Metal] ratio during the deposition process, the effect of CIGS layer thickness on the solar cell properties was investigated. With increase in the thickness up to 2.8 mu m, the short circuit current density was increased to over 35 mA/cm(2) w/o AR coating, resulting in conversion efficiency above 18% using low temperature deposition method. (C) 2016 Elsevier B.V. All rights reserved.

【 授权许可】

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