Correlation of Raman and X-ray diffraction measurements of annealed pulsed laser deposited ZnO thin films

THIN SOLID FILMS

卷:436

Article

Roy, C ; Byrne, S ; McGlynn, E ; Mosnier, JP ; de Posada, E ; O'Mahony, D ; Lunney, JG ; Henry, MO ; Ryan, B ; Cafolla, AA

关键词: laser deposition;    II-VI semiconductors;    structure and morphology;    thermal effects;   

DOI  :  10.1016/S0040-6090(03)00617-5

来源: Elsevier

【 摘 要 】

Raman spectroscopy, X-ray diffractometry and atomic force microscopy have been used to characterise ZnO thin films grown by pulsed laser deposition as a function of the post-growth annealing temperature. The results show substantial enhancement and broadening of certain Raman features which correlate excellently with the change in width of the X-ray diffraction peaks. The 570 cm(-1) Raman feature showed pronounced asymmetry and enhanced intensity in the unannealed sample. An increase in grain size observed after subsequent annealing produced a substantial reduction in both the asymmetry and intensity of this peak. Our experimental data suggest that electric fields, due to charge trapping at grain boundaries, in conjunction with localised and surface phonon modes are the cause of the intensity enhancement and asymmetry of this feature. (C) 2003 Elsevier Science B.V. All rights reserved.

【 授权许可】

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