Shutterless deposition of phosphorous doped microcrystalline silicon by Cat-CVD

THIN SOLID FILMS

卷:430

Article; Proceedings Paper

Fonrodona, M ; Gordijn, A ; van Veen, MK ; van der Werf, CHM ; Bertomeu, J ; Andreu, J ; Schropp, REI

关键词: microcrystalline silicon;    catalytic CVD;    phosphorous doping;   

DOI  :  10.1016/S0040-6090(03)00101-9

来源: Elsevier

【 摘 要 】

In this paper we present results on phosphorous-doped muc-Si:H by catalytic chemical vapour deposition in a reactor with an internal arrangement that does not include a shutter. An incubation phase of around 20 nm seems to be the result of the uncontrolled conditions that take place during the first stages of deposition. The optimal deposition conditions found lead to a material with a dark conductivity of 12.8 S/cm, an activation energy of 0.026 eV and a crystalline fraction of 0.86. These values make the layers suitable to be implemented in solar cells. (C) 2003 Elsevier Science B.V. All rights reserved.

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