GROWTH OF ZNO THIN-FILMS ON GAAS BY PULSED-LASER DEPOSITION

THIN SOLID FILMS

卷:259

Letter

CRACIUN, V ; ELDERS, J ; GARDENIERS, JGE ; GERETOVSKY, J ; BOYD, IW

关键词: LASER ABLATION;    ZINC OXIDE;    X-RAY DIFFRACTION;    DEPOSITION PROCESS;    STRUCTURAL PROPERTIES;   

DOI  :  10.1016/0040-6090(94)09479-9

来源: Elsevier

【 摘 要 】

ZnO thin films have been grown on GaAs substrates using the pulsed laser deposition technique with or without a photodeposited SiO2 buffer layer. The presence of the SiO2 layer has a beneficial effect on the crystalline quality of the grown ZnO films. Highly c-axis oriented ZnO films having a full width at half maximum value of the (002) X-ray diffraction line of less than 0.13 degrees have been grown on such buffer layers at a substrate temperature of only 350 degrees C.

【 授权许可】

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