Effect of Germanium content and strain on the formation of extended defects in ion implanted Silicon/Germanium

THIN SOLID FILMS

卷:518

Article; Proceedings Paper

Fazzini, P. F.^1,2  Cristiano, F.^1,2  Talbot, E.^1,2  Ben Assayag, G.³  Paul, S.⁴  Lerch, W.⁴  Pakfar, A.⁵  Hartmann, J. M.⁶ 

[1] CNRS, LAAS, F-31077 Toulouse, France

[2] Univ Toulouse, LAAS, ISAE, UPS,INSA,INP, F-31077 Toulouse, France

[3] Univ Toulouse, CNRS, CEMES, F-31055 Toulouse, France

[4] Mattson Thermal Prod GmbH, D-89160 Dornstadt, Germany

[5] STMicroelectronics, F-38926 Crolles, France

[6] MINATEC, CEA LETI, F-38054 Grenoble 9, France

关键词: SiGe;    Extended defects;    Ge implants;    Strain;    Ion implantation;    CMOS;   

DOI  :  10.1016/j.tsf.2009.09.172

来源: Elsevier

【 摘 要 】

We studied the evolution of extended defects in relaxed and strained Si and SiGe structures after an amorphising implant. The investigated structures included three relaxed SiGe alloy layers with various Ge contents (20, 35 and 50 at%), a 40 nm-thick tensely strained Si layer and a 40 rim-thick compressively strained Si0.8Ge0.2 layer. Concerning the compositional effects, we found that the increase of Ge concentration in relaxed SiGe structures leads to (i) an overall decrease of the defect stability and to (n) an enhanced {311}-to-loops transformation As for the strain effects, it is found that (I) Tensile strain (in Si) retards the transformation of {311} defects into loops, (n) compressive strain (in SiGe) enhances the transformation of {311}s into loops, (m) in all cases, the overall defect stability is not strongly modified in the presence of strain. The observed results are discussed in terms of the various mechanisms involved. including the increase of the interstitial diffusivity in relaxed SiGe alloys (with respect to Si) and the strain effects oil both interstitial equilibrium concentration and defect formation energy (C) 2009 Elsevier B.V. All rights reserved

【 授权许可】

Free