Hysteresis and process stability in reactive high power impulse magnetron sputtering of metal oxides

THIN SOLID FILMS

卷:519

Article

Aiempanakit, Montri¹  Kubart, Tomas^2,3  Jensen, Jens⁴ 

[1] Linkoping Univ, Dept Phys Chem & Biol, IFM Mat Phys, Plasma & Coatings Phys Div, SE-58183 Linkoping, Sweden

[2] Uppsala Univ, Angstrom Lab, SE-75121 Uppsala, Sweden

[3] Czech Tech Univ, Fac Elect Engn, Dept Control Engn, CR-16635 Prague 6, Czech Republic

[4] Linkoping Univ, Thin film Phys Div, IFM Mat Phys, SE-58183 Linkoping, Sweden

关键词: Reactive sputtering;    High power impulse magnetron sputtering;    Aluminum oxide;    Cerium oxide;    Hysteresis;    Process stability;   

DOI  :  10.1016/j.tsf.2011.06.021

来源: Elsevier

【 摘 要 】

In the further development of reactive sputter deposition, strategies which allow for stabilization of the transition zone between the metallic and compound modes, elimination of the process hysteresis, and increase of the deposition rate, are of particular interest. In this study, the hysteresis behavior and the characteristics of the transition zone during reactive high power impulse magnetron sputtering (HiPIMS) of Al and Ce targets in an Ar-O-2 atmosphere as a function of the pulsing frequency and the pumping speed are investigated. Comparison with reactive direct current magnetron sputtering (DCMS) reveals that HiPIMS allows for elimination/suppression of the hysteresis and a smoother transition from the metallic to the compound sputtering mode. For the experimental conditions employed in the present study, optimum behavior with respect to the hysteresis width is obtained at frequency values between 2 and 4 kHz, while HiPIMS processes with values below or above this range resemble the DCMS behavior. Al-O films are deposited using both HiPIMS and DCMS. Analysis of the film properties shows that elimination/suppression of the hysteresis in HiPIMS facilitates the growth of stoichiometric and transparent Al2O3 at relatively high deposition rates over a wider range of experimental conditions as compared to DCMS. (C) 2011 Elsevier B.V. All rights reserved.

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