Growth of NbO2 thin films on GaN(0001) by molecular beam epitaxy

THIN SOLID FILMS

卷:691

Article

Posadas, Agham¹  Kvit, Alexander²  Demkov, Alexander A.¹ 

[1] Univ Texas Austin, Dept Phys, 1 Univ Stn C1600, Austin, TX 78712 USA

[2] Univ Wisconsin, Dept Mat Sci & Engn, 1509 Univ Ave, Madison, WI 53706 USA

关键词: Niobium;    Gallium nitride;    Molecular beam epitaxy;    X-ray photoelectron spectroscopy;    Scanning transmission electron microscopy;    Interfacial reaction;   

DOI  :  10.1016/j.tsf.2019.137603

来源: Elsevier

【 摘 要 】

We report on the growth of epitaxial NbO2 thin films by molecular beam epitaxy on GaN (0001). The combination of these two materials is of interest in resistive switching devices that can operate at high temperature. We show that direct deposition of Nb metal on GaN under an oxygen environment results in a substantial interfacial reaction layer. We perform detailed spectroscopic and structural analyses of the film and interface and describe their implications for the growth of this materials system.

【 授权许可】

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