Formation and structural characterization of nanocrystalline Si/SiC multilayers grown by hot filament assisted chemical vapor deposition using CH3SiH3 gas jets

THIN SOLID FILMS

卷:518

Article

Ikoma, Yoshifumi¹  Okuyama, Ryousuke¹  Arita, Makoto¹  Motooka, Teruaki¹ 

[1] Kyushu Univ, Dept Mat Sci & Engn, Fukuoka 8190395, Japan

关键词: Chemical vapor deposition;    Silicon;    Silicon carbide;    Multilayer;    Nanocrystals;    Transmission electron microscopy;    X-ray photoelectron spectroscopy;   

DOI  :  10.1016/j.tsf.2009.10.127

来源: Elsevier

【 摘 要 】

We report on the formation and the structural characterization of nanocrystalline Si/SiC (nc-Si/SiC) multilayers on Si(100) by hot filament assisted chemical vapor deposition using CH3SiH3 gas pulse jets. Si rich amorphous SiC (a-Si1-xCx, x similar to 0.33) was initially grown at the substrate temperature (T-s) of 600 degrees C with heating a hot filament at similar to 2000 degrees C. The following crystalline SiC layers were grown at T-s = 850 degrees C without utilizing a hot filament. When the a-Si1-xCx layer was ultrathin (<2 nm) on Si(100), this a-Si1-xCx layer was transformed to a single epitaxial SiC layer during the subsequent SiC growth process. The Si{111} faceted pits were formed at the SiC/Si(100) interface due to Si diffusion processes from the substrate. When the thickness of the initial a-Si1-xCx layer was increased to similar to 5 nm, a double layer structure was formed in which this amorphous layer was changed to nc-Si and nc-SiC was grown on the top resulting in the considerable reduction of the {111} faceted pits. It was found that nc-SiC was formed by consuming the Si atoms uniformly diffused from the a-Si1-xCx layer below and that Si nanocrystals were generated in the a-Si1-xCx layers due to the annealing effect during further multilayer growths. (C) 2009 Elsevier B.V. All rights reserved.

【 授权许可】

Free