Fabrication of polymer-based transistors with source-drain electrodes made of carbon nanotubes and silver nanoparticles by soft lithography techniques

THIN SOLID FILMS

卷:554

Article; Proceedings Paper

Kanai, Ryo¹  Itoh, Eiji¹ 

[1] Shinshu Univ, Dept Elect & Elect Engn, Nagano 3808553, Japan

关键词: Organic field effect transistor;    Soft lithography;    Poly(3-hexylthiophene);    Printed source-drain electrodes;    Carbon nanotube;    Silver nanoparticles;   

DOI  :  10.1016/j.tsf.2013.08.107

来源: Elsevier

【 摘 要 】

In this study, we have developed multilayer deposition and patterning processes with a resolution of 1 mu m that can be used to fabricate all-printed, polymer-based organic field-effect transistors (p-OFETs) on the basis of vacuum-free, solution-processable soft lithography techniques. We have used regioregular poly(3-hexylthiophene) (P3HT) as a soluble polymer semiconductor and poly(methylmethacrylate) as soluble polymer gate insulators. We have compared the electrical properties of p-OFETs with multi-walled carbon nanotubes (MWNTs), silver nanoparticles (NPs), and their composites as printed source-drain (S-D) electrodes in order to fabricate vacuum-free, all-printed p-OFETs. The p-OFETs with MWNT S-D electrodes exhibited higher hole mobility and on/off ratios than the devices with Ag NP S-D electrodes owing to better contact at the MWNT/P3HT interface. The high sheet resistance of MWNT electrodes was considerably reduced by mixing with Ag NPs. Both the contact resistance and channel resistance were maintained at low values, resulting in improved electrical properties of p-OFETs. (C) 2013 Elsevier B. V. All rights reserved.

【 授权许可】

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