Evaluation of subsurface damage inherent to polished GaN substrates using depth-resolved cathodoluminescence spectroscopy

THIN SOLID FILMS

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Article

Lee, Jinhyung¹  Kim, Jong Cheol^2,4  Kim, Jongsik³  Singh, Rajiv K.⁴  Arjunan, Arul C.⁴  Lee, Haigun² 

[1] SK Hynix, 2091 Gyeongchung Daero, Icheon Si 17336, Gyeonggi Do, South Korea

[2] Korea Univ, Dept Mat Sci & Engn, 145 Anam Dong, Seoul 02841, South Korea

[3] Korea Inst Sci & Technol, 5 Hwarang Ro 14 Gil, Seoul 02792, South Korea

[4] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

关键词: Subsurface damage;    Chemical mechanical polishing;    Non-radiative recombination;    Cathodoluminescence spectroscopy;    Gallium nitride;   

DOI  :  10.1016/j.tsf.2018.07.002

来源: Elsevier

【 摘 要 】

The extent of subsurface damage on (0001) GaN wafers post different polishing treatments was quantified using depth-resolved cathodoluminescence spectroscopy (DRCLS). The band edge emission spectra were obtained from CLS with different electron energies, which manifested a significant non-radiative recombination resulted from polishing-induced subsurface damage. Cross-sectional transmission electron microscopy (XTEM) was also used to diagnose the extent of the subsurface damage layer. For the GaN polished with 1.00 and 0.25 mu m diamonds abrasive, the extent of non-radiative subsurface damage is about 250 and 100 nm, corresponding to the calculated electron penetration depth at the accelerating voltage for the onset of band edge emission. In this study, the depth of subsurface damage estimated from CL spectra compared well with direct XTEM measurements in GaN substrate.

【 授权许可】

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