Production of high density and low electron-temperature plasma by a modified grid-biasing method using inductively coupled RF discharge

THIN SOLID FILMS

卷:457

Article; Proceedings Paper

Ikada, R ; Nishimura, G ; Kato, K ; Iizuka, S

关键词: electron temperature;    grid bias method;    inductively coupled plasma;    gamma effect;   

DOI  :  10.1016/j.tsf.2003.12.013

来源: Elsevier

【 摘 要 】

A noble method for the production of high density and low electron temperature plasma is presented. In plasma enhanced chemical vapor depositions, electron temperature affects the quality of deposited films, so a low-electron-temperature plasma is required to reduce excess dissociated radicals. Here, a grid-biasing method is modified and improved to produce high-electron-density and low-electron-temperature plasmas to increase deposition speed. As a result, the electron temperature is lowered in a range of 0.1-0.5 eV and the electron density is raised from the order of 10(9) to similar to2 X 10(11) cm(-3). (C) 2003 Elsevier B.V. All rights reserved.

【 授权许可】

Free