Logic gates with ion transistors

THIN SOLID FILMS

卷:638

Article

Grebel, H.^1,2 

[1] NJIT, Elect Imaging Ctr, Newark, NJ 07102 USA

[2] NJIT, Elect & Comp Engn Dept, Newark, NJ 07102 USA

关键词: Ion gates;    Ion logic gates;    Electrolyte potential barrier;    Electrically controlled batteries;    Electrochemical cells;   

DOI  :  10.1016/j.tsf.2017.07.044

来源: Elsevier

【 摘 要 】

Electronic logic gates are the basic building blocks of every computing and micro-controlling system and typically require the integration of several switching elements. Ion circuits are much slower than their electronic counterpart; yet combining chemistry or bio chemistry with digital aspects is an intriguing concept. Here we demonstrate ion-XOR and ion OR gates with two electrochemical cells without pre-ion separation. The cells were modified to include a third, permeable and conductive mid electrode (the gate), which was placed between the anode and cathode. Key to our demonstration is the use of small biasing gate power with respect to the circuit's power output. The effect is reversible and a demonstration of self-powered ion circuitry. (C) 2017 Elsevier B.V. All rights reserved.

【 授权许可】

Free