Fabrication of double-dot single-electron transistor in silicon nanowire

THIN SOLID FILMS

卷:518

Article; Proceedings Paper

Jo, Mingyu¹  Kaizawa, Takuya¹  Arita, Masashi¹  Fujiwara, Akira²  Ono, Yukinori²  Inokawa, Hiroshi³  Choi, Jung-Bum⁴  Takahashi, Yasuo¹ 

[1] Hokkaido Univ, Grad Sch Informat Sci & Technol, Sapporo, Hokkaido 0600814, Japan

[2] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

[3] Shizuoka Univ, Res Inst Elect, Hamamatsu, Shizuoka 4328011, Japan

[4] Chungbuk Natl Univ, Phys & Res Inst NanoSci & Technol, Cheongju 361763, Chungbuk, South Korea

关键词: Quantum dots;    Coulomb blockade;    Single-electron tunneling;    Double-dot SETs;   

DOI  :  10.1016/j.tsf.2009.10.085

来源: Elsevier

【 摘 要 】

We propose a simple method for fabricating Si single-electron transistors (SET) with coupled dots by means of a pattern-dependent-oxidation (PADOX) method. The PADOX method is known to convert a small one-dimensional Si wire formed on a silicon-on-insulator (SOI) substrate into a SET automatically. We fabricated a double-dot Si SET when we oxidized specially designed Si nanowires formed on SOI substrates. We analyzed the measured electrical characteristics by fitting the measurement and simulation results and confirmed the double-dot formation and the position of the two dots in the Si wire. (C) 2009 Elsevier B.V. All rights reserved.

【 授权许可】

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